Al^(3+):KTP晶体生长及其相关性质研究  

Study on Growth and Properties of Al^(3+):KTP Crystal

作　　者：常新安[1] 华晓晓[1] 臧和贵[1] 陈学安[1] 肖卫强[1] 代美娟[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022

出　　处：《人工晶体学报》2008年第3期572-576,共5页Journal of Synthetic Crystals

摘　　要：采用高温溶液法生长不同掺质浓度的Al3+:KTP晶体,以等离子体发射光谱法测定晶体中Al3+的含量,并计算出Al3+在相应生长体系中的分配系数。采用X射线粉末衍射和粉末倍频法分别测定了所生长晶体的晶胞参数和倍频效应,结果表明随着晶体中掺质浓度的增加,晶胞参数逐渐减小,而倍频效应呈现略微增强的趋势。Al^3＋ doped KTP crystals have been grown from high temperature solutions with different concentration of the dopant.The contents of Al^3＋ in the crystal were determined by ICP,and the distribution coefficients of Al^3＋ in corresponding growth systems were obtained subsequently.The lattice parameters were reduced and the powder frequency-doubling effect was strengthened slightly as the increase of the doping ion in Al^3＋：KTP crystals.

关 键 词：Al^3+:KTP晶体 分配系数 晶胞参数 倍频效应 

分 类 号：O782[理学—晶体学]