Magnetoresistance Probe of Ultrathin Mn5Ge3 Films with Anderson Weak Localization  

作　　者：陈立军 王得勇 詹清峰 何为 李庆安 

机构地区：[1]State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190

出　　处：《Chinese Physics Letters》2008年第7期2625-2627,共3页中国物理快报（英文版）

摘　　要：We present the magnetoresistance measurements of ultrathin Mn5Ge3 films with different thicknesses at low temperatures. Owing to the lattice mismatch between MnsGe3 and Ge （111）, the thickness of MnsGe3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers （MLs）, the magnetoresistance of the Mn5 Ge3 films appears a peak at about 6 kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn5 Ge3 film is a potential material for spin injection.We present the magnetoresistance measurements of ultrathin Mn5Ge3 films with different thicknesses at low temperatures. Owing to the lattice mismatch between MnsGe3 and Ge （111）, the thickness of MnsGe3 films has a significant effect on the magnetoresistance. When the thickness of Mn is more than 72 monolayers （MLs）, the magnetoresistance of the Mn5 Ge3 films appears a peak at about 6 kOe, which shows that the magnetoresistance results from the Anderson weak localization effect and the variable range hopping in the presence of a magnetic field. The magnetic and semiconducting properties indicate that the Mn5 Ge3 film is a potential material for spin injection.

关 键 词：CONDUCTION INJECTION 1T-TAS2 

分 类 号：O441[理学—电磁学]