High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170 GHz and fmax=253 GHz  

作　　者：金智 苏永波 程伟 刘新宇 徐安怀 齐鸣 

机构地区：[1]Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 [2]State Key Lab of Fhnctionai Materiais for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050

出　　处：《Chinese Physics Letters》2008年第7期2686-2689,共4页中国物理快报（英文版）

摘　　要：The layer structure of InGaAs/InP double heterojunction bipolar transistor （DHBT） is designed to enhance the frequency performance and breakdown voltage. The composition-graded base structure is used to decrease the base transit time. The InGaAs setback layer and two highly doped InGaAsP layers are used to eliminate the conduction band spike of the collector. The submicron-emitter InGaAs/InP DHBT is fabricated successfully. The base contact resistance is greatly decreased by optimization of contact metals. The breakdown voltage is more than 6 V. The current gain cutoff frequency is as high as 170 GHz and the maximum oscillation frequency reached 253 GHz. The DHBT with such high performances can be used to make W-band power amplifier.The layer structure of InGaAs/InP double heterojunction bipolar transistor （DHBT） is designed to enhance the frequency performance and breakdown voltage. The composition-graded base structure is used to decrease the base transit time. The InGaAs setback layer and two highly doped InGaAsP layers are used to eliminate the conduction band spike of the collector. The submicron-emitter InGaAs/InP DHBT is fabricated successfully. The base contact resistance is greatly decreased by optimization of contact metals. The breakdown voltage is more than 6 V. The current gain cutoff frequency is as high as 170 GHz and the maximum oscillation frequency reached 253 GHz. The DHBT with such high performances can be used to make W-band power amplifier.

关 键 词：the power-law exponents precipitation durative abrupt precipitation change 

分 类 号：TN3[电子电信—物理电子学]