四硫代富瓦烯及其CT复合物导电LB膜  

Conducting Langmuir-Blodgett Films Based on a New Tetrathiafulvalene and lts Charge Transfer Complex

作　　者：李洪启[1] 姚钟麒[1] 刘丹 谭干祖[1] 俞贤达[1] 

机构地区：[1]中国科学院兰州化学物理研究所,兰州730000

出　　处：《物理化学学报》1997年第11期1034-1039,共6页Acta Physico-Chimica Sinica

摘　　要：Conducting Langmuir-Blodgett (LB) films based on a new asymmetrical tetrathiafulvalene (TTF) and its charge transfer complex with TCNQ were prepared by admixing with arachidic acid. The LB films were characterized by surface pressure-area isotherms, UV spectra, and X-ray diffeaction. Conductivity of the LB films relating to the number of layers was studied. After doped with iodine the highest conductivity for the asymmetrical TTF and its TCNQ complex LB film reached 0.23 and 4.7×10-5 S·cm- 1 ，respectively.Conducting Langmuir-Blodgett (LB) films based on a new asymmetrical tetrathiafulvalene (TTF) and its charge transfer complex with TCNQ were prepared by admixing with arachidic acid. The LB films were characterized by surface pressure-area isotherms, UV spectra, and X-ray diffeaction. Conductivity of the LB films relating to the number of layers was studied. After doped with iodine the highest conductivity for the asymmetrical TTF and its TCNQ complex LB film reached 0.23 and 4.7×10-5 S·cm- 1 ，respectively.

关 键 词：四硫代富瓦烯 电荷转移复合物 LB膜 导电性 

分 类 号：TM242[一般工业技术—材料科学与工程] O484.42[电气工程—电工理论与新技术]