有机/无机异质结薄膜发光二极管  

Thin Film Light-emitting Diodes with Organic/Inorganic Heterostructure

作　　者：谭海曙[1] 陈立春[1] 杨小辉[2] 王向军[2] 谢洪泉[3] 高广华[3] 姚建铨[1] 

机构地区：[1]天津大学精仪学院激光与光电子研究所,天津300072 [2]天津理工学院材料物理研究所,天津300191 [3]华中理工大学化学系,武汉430074

出　　处：《物理化学学报》1997年第10期942-945,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金!69606002;天津市高教局重点学科基金

摘　　要：Thin film light-emitting diodes with organic/inorganic heterostructure in which ZnO:Zn layer was used as electron transporting and hole blocking layer, PDDOPV, Poly(2,5- Didodecyloxy-1,4 Phenylenevinylene ) was used as hole transport and emission layer have been successfully prepared. Comparing to single layer device, the luminescent efficiency of bilayer device is improved about twenty-six times, the emission spectrum’s peak wavelength shifts to short wavelength, the half width at full maximum (HWFM) widens. The improvement of luminescent efficiency is due to the insertion of ZnO:Zn layer.Thin film light-emitting diodes with organic/inorganic heterostructure in which ZnO:Zn layer was used as electron transporting and hole blocking layer, PDDOPV, Poly(2,5- Didodecyloxy-1,4 Phenylenevinylene ) was used as hole transport and emission layer have been successfully prepared. Comparing to single layer device, the luminescent efficiency of bilayer device is improved about twenty-six times, the emission spectrum's peak wavelength shifts to short wavelength, the half width at full maximum (HWFM) widens. The improvement of luminescent efficiency is due to the insertion of ZnO:Zn layer.

关 键 词：PDDOPV 氧化锌 异质结薄膜 LED 发光二极管 

分 类 号：TN383[电子电信—物理电子学]