碲镉汞光伏探测器的变面积表面钝化研究  

Surface Passivation of Variable-Area HgCdTe Photovoltaic Detectors

作　　者：乔辉[1] 徐国庆[1] 贾嘉[1] 李向阳[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083

出　　处：《Journal of Semiconductors》2008年第7期1383-1386,共4页半导体学报（英文版）

摘　　要：利用同一片碲镉汞材料制备了由单层ZnS和双层CdTe/ZnS作钝化膜的变面积光伏探测器,对两种钝化膜结构的变面积器件进行了对比研究.通过分析两种器件的电流-电压(I-V)特性曲线以及零偏电阻-面积乘积(R0A)与周长-面积比(p/A)的关系曲线,发现ZnS钝化的器件具有较大的表面漏电流;通过分析两种器件的电流噪声与暗电流的关系,发现ZnS钝化的器件的噪声特性较接近散粒噪声,CdTe/ZnS双层钝化的器件则表现出较好的基本1/f噪声特性,使得器件噪声要小于单层ZnS钝化的器件.Two types of variable-area photovoltaic detectors passivated by single ZnS layer and dual （CdTe/ZnS） layers have been fabricated on the same HgCdTe wafer. Through analyzing the current-voltage curves,the relation between the product of zero-bias resistance and area （R0 A）, and the ratio of perimeter and area （p/A） of the two types of detectors,it was found that the detectors passivated by ZnS had a significant surface leakage current. Through analyzing the relation of current noise and dark current,it was found the noise of detectors passivated by ZnS was close to shot noise,and the detectors passivated by CdTe/ZnS showed an obvious basic 1/f noise characterization,which caused lower noise than detectors passivated by ZnS.

关 键 词：钝化 变面积 散粒噪声 1/f噪声 光伏探测器 碲镉汞 

分 类 号：TN215[电子电信—物理电子学]