以溅射为主的叠层硒化法制备大面积铜铟镓硒薄膜  

Application of sputtering-based laminating selenylation process to preparation of CIGS thin films

作　　者：焦飞[1] 廖成[1] 周震[1] 韩俊峰[1] 谢华木[1] 赵夔[1] 

机构地区：[1]北京大学重离子物理研究所,北京100871

出　　处：《真空》2008年第4期66-69,共4页Vacuum

基　　金：北京市自然科学基金资助批准号:H030630010120

摘　　要：本文采用基于溅射为主的四元叠层硒化法制备大面积铜铟镓硒薄膜.分别利用SEM与EDX对四元叠层这一新方法制备的薄膜进行微观结构分析与成分分布分析。结果发现,在采用四元叠层发制备CIGS薄膜中,提高衬底温度,控制Se源温度即控制预置层中Se的含量可以有效的改善薄膜的微观结构,对已经制备完毕的薄膜进行二次退火,不但可以获得比较好的微观结构,同时还可以有效的控制Ga在薄膜内部沿深度方向的分布。A sputtering-based laminating selenylation process was developed and applied to the preparation especially the commercial production of large-area CIGS thin films, ie., the Cu （In,Ga）Se2 films. SEM and EDX were used to analyze the microsturcture and composition distribution of the CIGS films prepared by the process developed. The results revealed that the film microstructure can be improved greatly if increasing the substrate temperature and controlling the temperature of Se source to increase Se content in precursor layers. After deposited, the CIGS thin films were reannealed so as to improve further their microstructure and, what＇s more, to control efficiently the Ga distribution along the film thickness.

关 键 词：铜铟镓硒薄膜 叠层法 大面积 

分 类 号：TB43[一般工业技术] TN403.2[电子电信—微电子学与固体电子学]