平面弧靶结构对锆膜层性能的影响  

Effect of construction of plane arc cathode target on properties of Zr films

作　　者：刘际伟[1] 刘永华[1] 张跃杰[1] 

机构地区：[1]中国工程物理研究院化工材料研究所,四川绵阳621900

出　　处：《真空》2008年第4期80-82,共3页Vacuum

摘　　要：通过对靶座结构的改变,使得靶面不再存在其他材质,由此提高了电弧离子镀膜膜层的纯度。考核了靶结构调整前后所镀制锆膜层的耐酸蚀性能,通过XPS手段测试了两种状态下膜层的成份及其含量,解释了两种膜层耐酸蚀性能差异的原因。The construction of the target holder was changed so as to keep no other materials included in target surface, thus improving the purity of the films prepared by arc discharge deposition. The resistance to acid corrosion of Zr films was checked up before and after the change of target holder construction by means of XPS which was used to test the chemical composition of the films before and after the change. The reasons why the resistance to acid corrosion is different between the films with and without target holder change are explained in detail.

关 键 词：电弧离子镀膜 耐蚀性 Zr膜 靶座结构 

分 类 号：O461.22[理学—电子物理学] TB43[理学—物理]