Al掺杂ZnO薄膜原子力显微图像的多重分形研究  

Multifractal study of atomic force microscopic images of Al-doped ZnO thin films

作　　者：吕建国[1] 宋学萍[1] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院

出　　处：《电子显微学报》2008年第3期192-196,共5页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.50642038);教育部博士点专项基金(No.20060357003);安徽省人才专项基金(No.2004Z029);安徽科技厅重点项目(No.07020203009);安徽省高等学校省级自然科学研究项目(No.KJ2007B135);安徽省高等学校青年教师科研资助计划项目(No.2006jql192);安徽大学人才队伍建设基金资助课题~~

摘　　要：用原子力显微镜观察溶胶-凝胶法制备Al掺杂ZnO薄膜的表面形貌,运用多重分形理论研究Al掺杂ZnO薄膜的原子力显微图像,多重分形谱可以很好地定量表征薄膜的表面形貌。结果显示:Al掺杂量为0.5 at.%的ZnO薄膜经550℃退火处理后,rms粗糙度为1.817,Al掺杂量为1.0 at.%的ZnO薄膜经600℃退火处理后,rms粗糙度增大到4.625,相应的分形谱宽Δα从0.019增大到0.287,分形参数Δf由-0.075变为0.124。Surface topography of Al-doped ZnO（AZO） thin films prepared by sol-gel process was measured with atomic force microscopic. The atomic force microscopic images of Al-doped ZnO thin films were studied by means of multifractal theory. Multifractal spectra were used to characterize the surface roughness of the thin film quantitatively. The results show that rms roughness of the AZO thin film with the Al doping concentration 0.5 at. % annealed at 550 ℃ was 1.817 but that with the Al doping concentration 1.0 at. % annealed at 600 ℃ was 4.625, the width of muhifractal spectrum Aa increased from 0.019 to 0.287, the Af changed from - 0.075 to 0.124, respectively.

关 键 词：Al掺杂ZnO薄膜 原子力显微图像 表面形貌 多重分形谱 

分 类 号：O484[理学—固体物理]