内应力对玻璃包覆钴基非晶丝巨磁阻抗的影响  

Effect of internal stresses on giant magneto-impedance in glass-covered Co-rich amorphous wire

作　　者：田斌[1] 江建军[1] 梁培[1] 马强[1] 何华辉[1] 

机构地区：[1]华中科技大学电子科学与技术系

出　　处：《电子元件与材料》2008年第7期36-39,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.50371029);新世纪优秀人才支持计划(No.NCET-04-0702)资助项目

摘　　要：通过测量玻璃包覆钴基非晶丝、去除玻璃包覆层非晶丝和经直流焦耳热退火后玻璃包覆非晶丝的磁阻抗值,研究了玻璃包覆层和直流退火对玻璃包覆钴基非晶丝内应力及巨磁阻抗效应的影响。结果表明:通过处理,玻璃包覆非晶丝的GMI最大值更容易在弱磁场出现;随着淬火残余内应力的改变,导致样品壳内畴的体积增加,引起应力感生横向各向异性,从而增强GMI效应;其中经90mA直流退火的样品GMI峰值最大可达144%。The effect of DC current annealing and glass removal on the giant magneto-impedance （GMI） effect of glass-covered amorphous wires was studied. The results show that through the DC current annealing and glass removal treatments, the magnetic field corresponding to the maximum of GMI is decreased, while the frequency dependence of GMI value is increased. The GMI value was enhanced by increasing Heat treatment of the sample by passing a DC current of 90 mA the outer domain volume and inducing a transverse anisotropy. through it improves the maximum GMI value to 144%.

关 键 词：电子技术 巨磁阻抗 磁畴 内应力 非晶态 

分 类 号：TB383[一般工业技术—材料科学与工程]