Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes  

作　　者：廖栽宜 杨华 王圩 

机构地区：[1]Key Laboratory on Integrated Optoelectronics and Key Laboratory of Semiconductors Materials of Chinese Academy of Sciences,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2008年第7期2557-2561,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No 90401025);the National 973 project (Grant No 2006CB604901)

摘　　要：This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.

关 键 词：electro-absorption modulator uni-carrier photodiode beam propagation method monolithic integration 

分 类 号：TN36[电子电信—物理电子学]