大功率激光二极管阵列正向特性研究  

Research on the Forward Characteristics of the High Power Laser Diode Array

作　　者：杨红伟[1] 张世祖[1] 陈玉娟[1] 家秀云[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2008年第7期383-386,共4页Micronanoelectronic Technology

摘　　要：大功率激光二极管阵列的正向特性失效问题严重影响器件的成品率和可靠性。对典型的失效现象进行了分类,确认了主要的失效现象是正向漏电。结合分阶段测试统计和对失效样品的显微分析,确定了造成激光二极管漏电的主要工艺环节以及工艺过程中机械损伤造成二极管漏电的机理。基于分析结果,改进了芯片结构设计和芯片工艺夹具。对改进后的芯片进行了统计实验验证,结果表明,激光二极管阵列的正向漏电问题得到基本解决,正向特性成品率从60%提高到90%以上。The forward characteristics failure of the high power laser diode array severely influences the yield and reliability of devices. Through classifying typical forward characteristics failure phenomena, the forward current leakage was considered as the main failure phenomenon. In combination with the process testing and microscopy analysis of failed samples, the main processes leading to the current leakage were discovered, and the mechanism of the current leakage due to mechanical damage was analyzed. Based on the analysis results, the chip protection area design was improved, and the mechanical damages during fabrication and package processes were avoided. Using the new chips in the statistic experiment, the results indicate that the forward current leakage is avoided basically and the forward characteristics yield is increased from 60% to 90%.

关 键 词：大功率激光二极管 正向漏电 解理纹 保护区 成品率 

分 类 号：TN365[电子电信—物理电子学] TN306