基于混合SET/MOSFET的比较器  

A Comparator Based on Hybrid Single-Electron Transistor and MOFET

作　　者：冯朝文[1] 蔡理[1] 

机构地区：[1]空军工程大学理学院,陕西西安710051

出　　处：《微计算机信息》2008年第20期290-292,共3页Control & Automation

基　　金：陕西省自然科学基础研究计划项目(2005F20);空军工程大学理学院科研资助项目(编号不公开)

摘　　要：基于双输入单电子晶体管与MOSFET的混合结构I-V特性和数字电路的逻辑设计思想,提出了一种由5个双栅极SET和6个MOSFET构成的一位比较器电路结构。该比较器有以下优点:利用双栅极SET和MOSFET构成逻辑块使电路结构大为简化;减少了管子的数目;电压兼容性好,驱动性能高;输入和输出高低电平都接近于1V和0V;静态总功耗低,为nW级。仿真结果验证了它的正确性。Based on the I-V characteristics of hybrid structure of double-input single-electron transistor and MOSFET and the concepts of digital integrated circuit design, a conlparator, which consists of 5 double-gate SETs and 6 MOSFETs, is proposed. The comparator has the following excellent characteristics： simplifying the circuit structure with the logic block of double-gate SET and MOSFET, decreasing the number of transistors, fine compatibility of voltage, high drivability, high and low voltage approximating 1V and 0V, the total static power of nW . The accuracy is validated by the simulation result of MIB-model SET.

关 键 词：单电子晶体管 双栅极SET 比较器 MIB模型 

分 类 号：TN402[电子电信—微电子学与固体电子学]