一种用于A/D转换器的低电压CMOS带隙电压基准源  

A Sub-1-V CMOS Bandgap Voltage Reference for A/D Converter

作　　者：华斯亮[1] 刘岩[1] 王东辉[1] 侯朝焕[1] 

机构地区：[1]中国科学院声学研究所

出　　处：《微电子学与计算机》2008年第7期210-213,共4页Microelectronics & Computer

摘　　要：设计了一种在1V电压下正常工作的用于A/D转换器的低功耗高精度的CMOS带隙电压基准.电路主要包括了一个带隙基准和一个运放电路,而且软启动电路不消耗静态电流.电路采用0.18μm CMOS工艺设计.仿真结果显示,温度从-40-125℃,温度系数约为1.93ppm/℃,同时电源抑制比在10kHz时为38.18dB.电源电压从0.9V到3.4V变化时,输出电压波动保持在0.17%以内;电路消耗总电流为5.18μA.A low power and high precision CMOS bandgap voltage reference circuit for an A/D converter is presented. It consists of a bandgap reference and an op-amp circuit with soft startup structure not consuming quiescent current. Prototype of the circuit is implemented in 0.18μm CMOS process. Simulations show that the temperature coefficient is about 1.93ppmPC from - 40℃to 125℃ and power supply rejection ratio is 38.18dB at 10 kHz. The output voltage is constant within 0.17% over a supply voltage range from 0.9V to 3.4V, consuming 5.18μA current.

关 键 词：带隙基准 CMOS 低电源电压 低功耗 

分 类 号：TN432[电子电信—微电子学与固体电子学]