电子相关性对硅基和碲基EDFA中四波混频与互相位调制的影响  

Influence of electronic correlation on FWM and XPM in Si-EDFAs and Te-EDFAs

作　　者：薛燕陵[1] 

机构地区：[1]华东师范大学电子系,上海200062

出　　处：《量子电子学报》2008年第4期471-477,共7页Chinese Journal of Quantum Electronics

基　　金：上海市科学技术委员会基础研究重点项目(05JC14069)资助课题。

摘　　要：光纤基质材料决定了铒离子周围的配位场特性,并决定了铒离子的吸收谱和发射谱的展宽特性。分析了发射谱线宽度对4,壳层电子相关性、电子偶极—偶极相互作用及共振增强非线性的影响。以石英硅和碲化物为基质的掺铒光纤具有不同的发射谱宽,对应着不同程度的共振增强非线性。文中用半经典理论分析比较了这两种光纤中由于四波混频和互相位调制引起的串扰。结果显示,相比于掺铒石英硅光纤,掺铒碲化物光纤具有更小的串扰,更适合于密集波分复用系统。Analyses show that the linewidth of emission spectra of EDFA determines the 4f shell electronic correlation. It influences the electronic dipole-dipole interaction and the resonantly enhanced nonlinearity of erbium ions. Si-EDFAs and Te-EDFAs, with different emission linewidths, correspond to different level of resonantly enhanced nonlinearities. Comparison of crosstalk induced by four-wave mixing and cross-phase modulation in Si-EDFAs and Te-EDFAs is carried out using semiclassical theory. The results show that Te- EDFA corresponds to much smaller crosstalk than Si-EDFA, and therefore is more appropriate for DWDM communications.

关 键 词：非线性光学 电子相关性 四波混频 互相位调制 共振增强非线性 掺铒石英硅光纤 掺铒碲化物光纤 

分 类 号：O437[机械工程—光学工程] TN253[理学—光学]