基于IR2214芯片的大功率IGBT晶体管驱动及保护电路的设计  

Design of High-Power Insulated Gate Bipolar Transistor (IGBT) Drive and Protection Circuit Based on IR2214

作　　者：陈志强[1] 宋凡峰[2] 

机构地区：[1]四方车辆研究所有限公司,山东青岛266000 [2]山东水利职业学院,山东日照276826

出　　处：《江苏电器》2008年第7期10-12,共3页

摘　　要：针对逆变需要的1200V大功率IGBT晶体管,分析了其栅极驱动特性,介绍了一种可驱动高压大功率IGBT的集成驱动ICIR2214芯片,并根据其特性设计了一种典型的应用电路。试验验证表明,该驱动电路具有良好的驱动及保护能力。Aiming at reverse needed 1 200 V high-power IGBT, analysis was made to its grid polar drive characteristics and introduction was made to a kind of IC IR2214 chip which can drive high voltage high-power IGBT, and a typical application circuit was designed according to its characteristics. The test verifies that the drive circuit is with fine drive and protection ability.

关 键 词：绝缘栅双极晶体管 驱动电路 IR2214芯片 过流保护 

分 类 号：TN386[电子电信—物理电子学]