U型凹槽电极硅MSM结构光电探测器的研制  

Research and fabrication of silicon based metal-semiconductor-metal photodetector with U-shape trench interdigitated electrodes

作　　者：黄燕华[1] 陈松岩[2] 李成[2] 蔡加法[2] 余金中[3] 

机构地区：[1]集美大学诚毅学院,福建厦门361021 [2]厦门大学物理系,福建厦门361005 [3]中国科学院半导体研究所,北京100083

出　　处：《光电子．激光》2008年第7期869-871,894,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60576001,60336010,60676027);福建省自然科学基金资助项目(A0410008)

摘　　要：为了提高硅MSM结构光电探测器的光电响应度,制备了U型凹槽电极结构的探测器。5 V偏压下,对650 nm波长入射光的绝对光电响应度测试表明,凹槽电极结构的探测器最大光电响应度值为0.486 A/W,比同样尺寸的平版结构光电探测器提高了约6倍。文中也对比了具有抗反射膜和不具有抗反射膜的器件相对响应光谱的差别,并且比较分析了叉指间隙分别为5μm和10μm器件光电响应的不同。The responsivity of silicon based metal-semiconductor-metal（MSM） photodetector（Si-MSM-PD） was improved by placing the planar interdigitated electrodes with U-shape trench interdigitated electrodes.The performance test indicates that the responsivity of Si-MSM-PD with U-shape trench interdigitated electrodes is 0.486 A/W for 650 nm laser at 5 V applied voltage.This responsivity is about 6 times larger than that of Si-MSM-PD with planar interdigitated electrodes whose responsivity is just 0.084 A/W.Besides,the performance of Si-MSM-PDs with different intergitated space of 5 μm and 10 μm was compared.

关 键 词：金属-半导体-金属结构 光电响应度 探测器 

分 类 号：TN365[电子电信—物理电子学]