巨磁电阻锰氧化物材料的低温电阻率行为的研究  

STUDY ON THE LOW TEMPERATURE ELECTRICAL RESISTIVITY OF COMPOSITE MANGANITES

作　　者：王新峰[1] 

机构地区：[1]山东理工大学物理与光电信息技术学院,山东淄博255049

出　　处：《低温物理学报》2008年第3期246-249,共4页Low Temperature Physical Letters

摘　　要：对巨磁电阻锰氧化物材料La2/3Ca1/3MnO3/YSZ(钇稳定氧化锆)(LCMO/YSZ)系列样品低温下电阻率行为进行研究,低温下电阻率行为一般是ρ=ρ0+ATa+BTb的形式,其中ρ0为剩余电阻率,a=2或3/2,b=5或9/2.T2代表电子-电子散射项,T3/2代表被无序自旋玻璃散射的电子项,T5代表电子-声子散射项,T9/2代表电子-双磁子散射项.在此指出b=5是合理的,代表电子-声子散射项.The low temperature electrical resistivity of La2/3 Ca1/3 MnO3/yttria-stabilized zirconia （YSZ） （LCMO/YSZ） was studied, the low temperature depend resistivity was commonly considered to keep to the equation ρ =ρ0 ＋ AT^a ＋ BT^b, where ρ0 is residual resistivity, a = 2 or 3/2, b = 5 or 9/2. 7 T^2 is electron-electron scattering term, T^3/2 is the term electron scattered by the disordered spin glasses, T^6 is electron-phonon scattering term, T^θ/2 is electron-two magnon scattering term. It was pointed out that b = 5 is reasonable, which is electron-phonon scattering term.

关 键 词：巨磁电阻 低温电阻率 电子-声子散射 

分 类 号：O482[理学—固体物理]