价层轨道平均能与掺杂二硼化镁体系临界电流密度的关系  

RELATIONSHIP BETWEEN DOPING MgB_2 CRITICAL CURRENT DENSITY AND AVERAGE ENERGY OF VALENCE ORBIT

作　　者：杨国峰[1] 孙爱民[1] 张秀娥[1] 王顺青[1] 张涛[1] 黄国海[1] 朱海滨[1] 

机构地区：[1]西北师范大学物理与电子工程学院,兰州730070

出　　处：《低温物理学报》2008年第3期253-256,共4页Low Temperature Physical Letters

摘　　要：本文研究了掺杂二硼化镁超导体系的原子价层轨道平均能|M|与临界电流密度Jc之间的关系,发现它们之间有较好的规律性.全部阳离子和阴离子的价层轨道平均能的平均值主要集中在10.12eV至11.29eV之间,阳离子与阴离子价层轨道平均能的平均值之差|D|几乎都集中在3.59eV至4.98eV之间.对于理解晶格上电子的静电作用与超导机理的联系是很有帮助的.The correlation between the energy of valence orbit and the critical current density of doping MgB2 was researched in this paper. It was found that the average values of valence orbits parameters＇ s average energy about cations and anions concentrate in 10. 12eV to 11. 29eV, and the difference ot that concentrate in 3.59eV to 4.98eV for doping MgB2 Superconductors. It was helpful to understand the connection between the electroststic action of the electron on the lattice of valence orbits with superconductivity

关 键 词：价层轨道平均能 掺杂二硼化镁 临界电流密度 

分 类 号：O511.4[理学—低温物理]