Ar离子注入P型MCT的反型分析  

Principle of Type Conversion in Ar Ion Implanted p-type Hg_(0.29)Cd_(0.71)Te

作　　者：杨春丽[1] 杨文运[1] 朱惜辰[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2008年第7期409-411,415,共4页Infrared Technology

摘　　要：对Ar离子注入p型MCT的反型进行了分析。由于Ar离子是中性离子,注入后反型的机理是否与B离子注入到p型MCT反型机理一致?我们根据B离子注入到p型MCT的模型进行了Ar离子注入反型的假设。经过实验验证了经Ar离子注入后,退火前不显现结整流特性,退火后显示出结整流特性,得到了Ar离子注入p型MCT中的反型大致与B离子注入到p型MCT反型结果一致。Ar离子注入后产生了大量的缺陷,形成剩余的Hg间隙原子被衍生缺陷所捕获,退火使得Hg间隙原子从衍生缺陷中逃逸出来而呈现低浓度的背景施主,造成了p型MCT的反型。We have studied the Principle of Type Conversion in Ar ion implanted p-type Hgo.29Cdo.71Te. For Ar Ion is neutral, the Principle of Type Conversion in B ion implanted p-type Hgo.29Cd0.71Te is as same as Ar ion implanted？ we supposed the Principle of Type Conversion of Ar ion implanted p-type Hgo.29Cd0.71Te depend on the modeling of B ion implanted p-type MCT. By study, we find that there is no conversion only after Ar ion implanted, after annealed, p-type Hgo.29Cd0.71Te has happened conversing. So we concluded that the Principle of Type Conversion in Ar ion implanted p-type MCT is same as B ion implanted p-type MCT.

关 键 词：Ar离子注入 MCT 反型 

分 类 号：TN213[电子电信—物理电子学]