掺氮二氧化钛薄膜的介质阻挡放电化学气相沉积及其结构性能研究  

Microstructures and Properties of N-Doped TiO_2 Films Grown by Dielectric Barrier Discharge Chemical Vapor Deposition

作　　者：李喆[1] 张溪文[1] 韩高荣[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《真空科学与技术学报》2008年第4期318-324,共7页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究发展计划(No.2007CB613403);浙江省科技计划项目纳米技术攻关及示范应用专项(No.2006C11118);高等学校科技创新工程重大项目培育资金项目(No.705026)

摘　　要：采用介质阻挡放电化学气相沉积(DBD-CVD)法,以四异丙醇钛(TTIP)作为钛源,氨气(NH3)和笑气(N2O)分别作为氮源的气相反应先驱体,成功制备了不同掺杂量的掺氮二氧化钛(TiO2)薄膜。SEM、XRD、XPS和UV-Vis透射光谱研究表明:所制得的掺氮二氧化钛薄膜均为锐钛矿相,氮源的引入对TiO2薄膜晶粒成长、晶体取向、表面形貌影响很大,并促使光吸收限红移,提高了薄膜在可见光照射下的光催化效率,并改善了薄膜表面的亲水性能。且NH3掺氮效果整体好于N2O。N-doped titanium dioxide films were grown by dielectric barrier discharge chemical vapor deposition （DBD-CVD） with titanium-tetraisopropoxide（TTIP） as the Ti source, NH3 and N2O as the precursor of nitrogen, respectively. The films were characterized with X-my diffraction（XRD）,X-ray photoelectron spectroscopy（XPS）, scanning electron microscopy（SEM）, and ultraviolet visible spectroscopy（UV-Vis）. The results show that N-doping significantly affects the microstmctures and properties of the films. For instance, N-doping considerably changes the growth, crystal orientation and surface morphology of the anatase phased TiO2 films. Moreover, N-doped TiO2 films have a narrower band-gap, and higher visible light induced photo-catalysis and hydrophilicity than the control sample. We found that when it comes to Ndoping, NH3 works better than N2O does.

关 键 词：介质阻挡放电化学气相沉积 掺氮TiO2薄膜 光催化性 亲水性 

分 类 号：O484[理学—固体物理]