加速器热中子照相装置CCD芯片屏蔽的模拟计算  

Simulation of shielding for a CCD chip of an accelerator-based thermal neutron radiography instrument

作　　者：胥建国 邹宇斌[1] 郭之虞[1] 唐国有[1] 郭利安[1] 郭纪美[1] 

机构地区：[1]北京大学核物理与核技术国家重点实验室,北京100871

出　　处：《核技术》2008年第8期583-586,共4页Nuclear Techniques

基　　金：国家自然科学基金(10575006)资助

摘　　要：建立了研究加速器中子源热中子照相装置CCD芯片屏蔽效果的蒙特卡罗模拟方法,对γ与中子吸收剂量率的模拟计算结果与实验相符。进行了基于9Be(d,n)反应的热中子照相装置屏蔽系统的优化设计,在复杂几何条件下用蒙特卡罗模拟分别计算了CCD芯片在中子、γ混合场中的吸收剂量率和快中子注量率,对CCD相机在辐射场中安全性能进行了评估。Mont-Carlo simulation was performed for shielding CCD chip of an accelerator-based thermal neutron radiography instrument from the γ-rays and neutrons. The simulation results were comparable with experimental data. The current shielding system was evaluated with this method. The dose rate of γ-rays and neutrons in the CCD chip was calculated and the influence of different shielding materials and geometry on y dose rate and fast neutron flux density in the CCD chip was investigated. The simulation indicates that the current shielding design can satisfy the operation demands of the thermal neutron radiography instrument with thick target ^9Be （d, n） reaction.

关 键 词：加速器中子源 CCD芯片 屏蔽 模拟计算 吸收剂量率 

分 类 号：O571[理学—粒子物理与原子核物理]