一种新型的无电阻实现的带隙电压基准源  

A Novel Low Temperature Coefficient Bandgap Reference without Resistors

作　　者：赵玉姣[1] 岳素格[1] 边强[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《微电子学与计算机》2008年第8期180-183,187,共5页Microelectronics & Computer

摘　　要：设计了一种新的采用0．35μm全数字工艺实现的无电阻的带隙基准电压源。该电路结构引入了差分放大器，以此来产生正比于温度的电压量，同时放大器减小了电路中由电源电压及温度变化所产生的镜像电流的误差，进一步提高了电路电源抑制比，降低了无电阻基准电压源的温度系数。Spice仿真结果表明，该电路结构具有较高的电源抑制比和低的温度系数：在电源电压从2．4V变化到5．0V时，输出电压波动小于9mV；在-25℃～125℃温度变化范围内，电压输出的最大变化量为±5．5mV。This paper describes a new band-gap reference （BGR） without resistors that can be fabricated in a 0.35μm digital CMOS technology. The proposed circuit uses differential amplifier to reduce the current mirror errors dependent on the supply voltage and temperature, so as to produce a temperature insensitive gain applied to the proportional to absolute temperature （PTAT） term in the reference. The simulation results with Spice indicate that the proposed BGR circuit has a higher power supply rejection ratio （PSRR） and low temperature coefficient （TC）. The fluctuation of the output reference voltage is less than 9mV when the power voltage changes from 2.4V to 5.0V and the output voltage of the new circuit has a maximum variation of ± 5.5mY in larger range from - 25℃ to 125℃.

关 键 词：无电阻带隙基准源 差分放大器 全数字工艺 自偏置电路 PTAT电压 

分 类 号：TN402[电子电信—微电子学与固体电子学]