Influence of Ring Oxidation-Induced Stack Faults on Efficiency in Silicon Solar Cells  

作　　者：周春兰 王文静 李海玲 赵雷 刁宏伟 励旭东 

机构地区：[1]Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703 Beijing 100080,Beijing Solar Energy Research Institute, Beijing, 100083

出　　处：《Chinese Physics Letters》2008年第8期3005-3008,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60576065, and the National High-Technology Research and Development Programme of China under Grant Nos 2006AA05Z405 and 2006AA04Z345.

摘　　要：We observe a strong correlation between the ring oxidation-induced stack faults （OISF） formed in the course of phosphor diffusion and the efficiency of Czochralski-grown silicon solar cells. The main reason for ring-OISF formation and growth in substrate is the silicon oxidation and phosphorus diffusion process induced silicon selfinterstitial point defect during POCI3 diffusion. The decreasing of minority carrier diffusion length in crystal silicon solar cell induced by ring-OISF defects is identified to be one of the major causes of efficiency loss.We observe a strong correlation between the ring oxidation-induced stack faults （OISF） formed in the course of phosphor diffusion and the efficiency of Czochralski-grown silicon solar cells. The main reason for ring-OISF formation and growth in substrate is the silicon oxidation and phosphorus diffusion process induced silicon selfinterstitial point defect during POCI3 diffusion. The decreasing of minority carrier diffusion length in crystal silicon solar cell induced by ring-OISF defects is identified to be one of the major causes of efficiency loss.

关 键 词：CZOCHRALSKI SILICON 

分 类 号：O64[理学—物理化学]