Broadening of Photoluminescence by Nonhomogeneous Size Distribution of Self-Assembled InAs Quantum Dots  

作　　者：杨希峰 刘昭麟 陈平平 陈效双 李天信 陆卫 

机构地区：[1]National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083

出　　处：《Chinese Physics Letters》2008年第8期3059-3062,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10474020, the National Basic Research Programme of China under Grant No 2006CB13921507, and the Knowledge Innovation Project of Chinese Academy of Sciences.

摘　　要：The photoluminescence spectrum （PL） of InAs quantum dots （QDs） at 80 K is studied by comparison between the theoretical calculation and experimental measurement. The Gaussian line shape is used to approximate the size distribution of QDs. Its mean volume and the standard full width at half maximum （FWHM） of the PL spectrum. size deviation are well correlated with the peak and The experimental PL spectrum is well reproduced by the theoretical model based on the effect mass approximation including the size distribution without any adjustable parameters. Compared with the standard size deviation value σ = 9 × 10^-2 determined by atomic force microscopic method a small value σ = 7 × 10^-2 is obtained by the best fitting process from the measured and calculated PL spectra.The photoluminescence spectrum （PL） of InAs quantum dots （QDs） at 80 K is studied by comparison between the theoretical calculation and experimental measurement. The Gaussian line shape is used to approximate the size distribution of QDs. Its mean volume and the standard full width at half maximum （FWHM） of the PL spectrum. size deviation are well correlated with the peak and The experimental PL spectrum is well reproduced by the theoretical model based on the effect mass approximation including the size distribution without any adjustable parameters. Compared with the standard size deviation value σ = 9 × 10^-2 determined by atomic force microscopic method a small value σ = 7 × 10^-2 is obtained by the best fitting process from the measured and calculated PL spectra.

关 键 词：ELECTRONIC-STRUCTURE OPTICAL-PROPERTIES INFRARED PHOTODETECTORS TEMPERATURE-DEPENDENCE GAAS RELAXATION LASERS ENERGY 

分 类 号：O413[理学—理论物理]