高效率非掺杂型白色有机电致发光器件  

High-efficient non-doped type white organic light-emitting devices

作　　者：丁桂英[1] 姜文龙[1] 汪津[1] 常喜[1] 王静[1] 王立忠[1] 王广德[1] 

机构地区：[1]吉林师范大学信息技术学院,吉林四平136000

出　　处：《光电子．激光》2008年第8期1039-1042,共4页Journal of Optoelectronics·Laser

基　　金：吉林省科技发展计划资助项目(20050523);吉林省教育厅科研计划资助项目([2003]25号;[2004]54号);四平科技局计划资助项目(2005007;2006008)

摘　　要：制备了基于rubrene超薄层和NPBX做激子阻挡层的高效率的非掺杂型白色有机电致发光器件。器件结构为:ITO/2T-NATA(20 nm)/NPBX(25-dnm)/rubrene(0.2 nm)/NPBX(d nm)/DPVBi(30 nm)/Alq(30 nm)/LiF(0.5 nm)/Al。器件的电致发光光谱依靠激子阻挡层NPBX厚度d的变化而变化,当NPBX厚度d为5 nm时,器件色坐标从7 V变化到16 V时均在白光的中心区域,有最大电流效率7.91 cd/A(V=7 V)和最大亮度13540 cd/m2(V=16 V)。High-efficient non-doped type white organic light-emitting devices（WOLEDs） were fabricated using an ultra thin rubrene film and exciton blocker of NPBX. The devices have the following stmcture;ITO/2T-NATA （20 nm）/NPBX （25-d nm）/ rubrene（0. 2 nm） / NPBX （d nm）/DPVBi（30 nm）/ Alq（30 nm）/LiF（0.5 nm）/A1. The EL spectrum of the de vices were dependent on the d and d= 5 ,the CIE chromaticity coordinates of the devices were well within the white region for voltage raging from 7 V to 16 V,This devices has a maximum luminous efficiency of 7.91 cd/A at 7 V and maximum luminance of 13 540 cd/m^2 at 16 V.

关 键 词：白色有机电致发光器件 非掺杂 效率 

分 类 号：TN383[电子电信—物理电子学]