钼硅化物改善刀口型硅尖场发射性能研究  

Study on the Improvement of Emission Property of Knife Like Silicon Tips by Mo Silicide

作　　者：李新义[1] 祁康成[1] 董建康[1] 罗德均[1] 王小菊[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2008年第4期1101-1103,共3页Chinese Journal of Electron Devices

基　　金：电子科技大学青年基金资助课题(YF020503)

摘　　要：采用湿法刻蚀、电子束蒸发、真空高温退火方法,成功制备出钼硅化物薄膜刀口型尖锥场发射阵列,并对涂敷钼硅化物薄膜刀口型尖锥阵列和刀口型硅尖锥阵列的电子发射性能进行了测试比较。结果表明,在刀口型硅尖锥阵列上制备钼硅化物薄膜,能够提高场发射电流密度和发射稳定性。该结论对进一步研究金属硅化物在改善场发射性能方面有着重要的意义。Mo silicide coated knife like silicon tips has been fabricated successfully by wet etching, electron beam evaporation and high vacuum temperature annealing. The emission properties of Mo silicide coated knife like silicon tips and pure knife like silicon tips have been tested and compared. It shows that the Mo silicide on the knife like silicon tips can improve both the field emission current and the emission stability. The results presented in this work have very significant effects on the further application of FEAs.

关 键 词：钼硅化物 刀口型硅尖阵列 场发射 

分 类 号：TN105[电子电信—物理电子学]