一种用于高压芯片的带隙基准源设计  

A Bandgap Reference Circuit Design for High Power Supply IC

作　　者：来新泉[1] 郭海朝[1] 牟在鑫[1] 

机构地区：[1]西安电子科技大学电路CAD研究所,西安710071

出　　处：《电子器件》2008年第4期1194-1196,1200,共4页Chinese Journal of Electron Devices

摘　　要：基于TSMC1．0μm 40V BCD工艺，利用带隙原理设计了一款用于高压芯片的基准源电路。仿真结果显示，该电路可以工作在10-25V电源电压下，输出的基准电压精度为13．3×10^-6／℃，输出电流高达20mA，且受电源电压影响很小。与传统高电源电压基准相比，该电路提高了输出电压的精度和稳定性，具有较大的电流驱动能力，完全可以作为芯片内部电源使用。Based on the TSMC 1.0 μm 40 V BCD process and the bandgap principle a reference circuit used in high voltage chip is designed. The simulation results show that a temperature coefficient of 13. 3 × 10^-6/℃ and output current up to 20 mA is achieved in the range of 10-25 V supply,and the output voltage is insensitive to the power supply. Compared with conventional reference circuit with high voltage power supply, the proposed circuit not only improves the precision and stability, but also has high current driving ability. Thus it can be used as internal voltage supply.

关 键 词：电压基准 电源管理 BCD 电流驱动 电源抑制 

分 类 号：TN432[电子电信—微电子学与固体电子学]