强发射电流反铁电冷阴极材料的实验研究  

Experimental Investigation of Antiferroelectric Cold Cathode for Strong Electron Emission

作　　者：盛兆玄[1] 冯玉军[1] 徐卓[1] 孙新利[2] 黄璇[1] 

机构地区：[1]西安交通大学电子材料研究所,西安710049 [2]第二炮兵工程学院103教研室,西安710025

出　　处：《西安交通大学学报》2008年第8期977-981,共5页Journal of Xi'an Jiaotong University

基　　金：国家重点基础研究发展规划资助项目(2002CB613307);国家自然科学基金资助项目(50472052)

摘　　要：采用固态烧结工艺制备了位于反铁电/铁电相界附近的PbLa(Zr,Sn,Ti)O3(PLZST)反铁电陶瓷样品.通过测定样品在快速单脉冲电压激励下的电子发射特性,得到了激励电压对发射电流的影响规律,发射电流随激励电压增加而增加,当激励电压大于1.5 kV时,发射电流趋于饱和.在单脉冲激励下进行电子发射实验,得到如下结果:在激励电压为800 V、抽取电压为0 V的条件下,发射电流密度为1.27 A/cm2;当抽取电压增加到4 kV时,获得了1 700 A/cm2的大发射电流密度.研究结果表明,室温下PLZST的反铁电陶瓷可在较低激励电压下实现电子发射,发射电流密度大,能够工作于4 Pa的低真空环境中.Antiferroelectric lead lanthanum zirconate stannate titanate（PLZST） ceramics samples near the ferroelectric-antiferroelectric phase boundary are prepared by a traditional solid-state reaction process. The influences of the driving voltage and extracting voltage on emission current are obtained by measuring the electron emission property of PLZST stimulated by rapid mono- pulse voltage. The emission current is enhanced with the increasing of driving voltage. When the driving voltage is higher than 1.5 kV, the emission current is saturated. When the driving voltage is 800 V and the accelerating voltage is 0 V, the emission current density is 1.27 A/cm2, and when the driving voltage is 800 V and the accelerating voltage is 4 kV, a strong emission current density with 1 700 A/cm2 is obtained. It is found that strong electron emission from PLZST antiferroelectric ceramic cathode can be realized under lower driving voltage at room temperature and the emission current density is high. The PLZST antiferroelectric ceramic cathode can work at the vacuum of 4 Pa.

关 键 词：反铁电陶瓷 电子发射 发射电流密度 

分 类 号：TN384[电子电信—物理电子学] TN104