Al-Mg-Si合金GP区强化作用的价电子结构分析  

Analysis of valence electron structure of GP zone in Al-Mg-Si alloyfor strengthening

作　　者：胡益丰[1] 沈大华[1] 邓文[2] 

机构地区：[1]江苏技术师范学院数理学院,江苏常州213001 [2]广西大学物理科学与工程技术学院,广西南宁530004

出　　处：《轻金属》2008年第8期55-58,共4页Light Metals

基　　金：江苏省普通高校自然科学研究计划资助项目(批准号:07KJD430041);江苏技术师范学院青年科研基金项目(批准号:KYY06094);国家自然科学基金(批准号:50361002)

摘　　要：运用固体经验电子理论,对Al-Mg-Si合金GP区(L10型)的价电子结构进行了计算。结果表明:GP区晶胞最强键和次强键上的共价电子数远比纯Al晶胞的最强键共价电子数多,其主键络骨架对合金键络起到增强作用,使得位错运动难以切割,从而提高了合金的硬度。以Mg原子为中心的共价键络在GP区生长时起到主导作用,生成较强的Mg-Mg键和Mg-Si键。由于细小共格的GP区大量均匀脱溶沉淀提升了基体的整体键络强度,同样对合金产生强化作用。The valence electron structure of GP zone with model L10 in Al- Mg - Si alloy was calculated according to the empirical electronic theory （EET） in solid. The results show that the number of the strongest and second strongest covalent bonds of GP zones is far more than that in ？ -Al cell. Because the primary bond- net framework of GP zone strengthens the matrix, it is difficult for the disiocation to cut the webs, resulting in increasing the hardness of the alloy. Compared with the covalent bond - net with centered Si atom, the one with centered Mg atom predominates, leading to the formation of the strong Mg - Mg and Mg - Si bonds. Since GP zone is coherent with matrix, the bond net strength is enhanced by the precipitation of GP zones and so strengthen the alloy.

关 键 词：Al—Mg—Si合金 GP区 价电子结构 

分 类 号：TG111.1[金属学及工艺—物理冶金]