电感耦合等离子体原子发射光谱法同时测定氧化锑中硅和磷  

Determination of silicon and phosphorous in antimony oxide by inductively coupled plasma emission spectrometry

作　　者：陆建平[1] 彭剑[1] 张丽[1] 唐姣荣[1] 龙建新[1] 石建荣 

机构地区：[1]广西大学化学化工学院,广西南宁530004 [2]广西华锑化工有限公司,广西南宁530241

出　　处：《冶金分析》2008年第7期50-52,共3页Metallurgical Analysis

基　　金：广西大学科研基金资助项目(X051108)

摘　　要：通过对氧化锑试样分解方法、硅磷分析线选择、共存元素光谱干扰和仪器最佳分析条件等方面的研究，建立了电感耦合等离子体原子发射光谱法测定氧化锑中硅和磷的方法。选用谱线Si 251．611nm，P 214．914nm作分析线，避免了基体元素对硅、磷的干扰。在优化的实验条件下，当硅磷的含量在0．01～300mg／L范围内时，其吸光度与硅磷浓度呈良好的线性关系，方法的栓出限为Si 0．04mg／L，P 0．07mg／L。对4个样品的硅和磷进行测定，回收率分别为95．82％～107．12％和93．47％～98．52％，相对标准偏差（n=10）分别为0．6％～3．4％和0．8％～4．8％。A method for the determination of silicon and phosphorus in antimony oxide by inductively coupled plasma emission spectrometry（ICP-AES） was reported. The sample dissolution methods, selection of spectral lines, interference of coexistent elements and the working parameters of the instrument were studied. Spectral line 214. 914 nm for P and 251. 611 nm for Si were selected, and the interferences from matrix were avoided. The method showed a satisfactory results when antimony oxide samples were determined. The linear calibration curve range of P and Si was obtained within 0.01- 300 mg/L, and the detection limits were obtained to be 0.07 μg/mL and 0.04 μg/mL respectively. The method was applied to the determination of Si and P in four samples with the recovery of 95.82% -107.12% for Si and 93.47%-98.52% for P,and the relative standard deviation of 0.6%-3.4% for Si and 0.8 %- 4.8 % for P respectively.

关 键 词：电感耦合等离子体原子发射光谱 硅 磷 氧化锑 

分 类 号：TG115.33[金属学及工艺—物理冶金]