Quantum compact model for thin-body double-gate Schottky barrier MOSFETs  

作　　者：栾苏珍 刘红侠 

机构地区：[1]School of Microelectronics, Xidian University [2]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices

出　　处：《Chinese Physics B》2008年第8期3077-3082,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No 60206006);the Program for New Century Excellent Talents of Ministry of Education of China (Grant No NCET-05-085);the Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200701)

摘　　要：Nanoscale Schottky barrier metal oxide semiconductor field-effect transistors （MOSFETs） are explored by using quantum mechanism effects for thin-body devices. The results suggest that for small nonnegative Schottky barrier heights, even for zero barrier height, the tunnelling current also plays a role in the total on-state current. Owing to the thin body of device, quantum confinement raises the electron energy levels in the silicon, and the tradeoff takes place between the quantum confinement energy and Schottky barrier lowering （SBL）. It is concluded that the inclusion of the quantum mechanism effect in this model, which considers an infinite rectangular well with a first-order perturbation in the channel, can lead to the good agreement with numerical result for thin silicon film. The error increases with silicon thickness increasing.Nanoscale Schottky barrier metal oxide semiconductor field-effect transistors （MOSFETs） are explored by using quantum mechanism effects for thin-body devices. The results suggest that for small nonnegative Schottky barrier heights, even for zero barrier height, the tunnelling current also plays a role in the total on-state current. Owing to the thin body of device, quantum confinement raises the electron energy levels in the silicon, and the tradeoff takes place between the quantum confinement energy and Schottky barrier lowering （SBL）. It is concluded that the inclusion of the quantum mechanism effect in this model, which considers an infinite rectangular well with a first-order perturbation in the channel, can lead to the good agreement with numerical result for thin silicon film. The error increases with silicon thickness increasing.

关 键 词：Schottky barrier quantum mechanism effects effective mass electron density 

分 类 号：TN386.1[电子电信—物理电子学]