硫增感对立方体AgCl微晶光电子衰减影响的动力学研究(英文)  

Dynamics Study of the Influence on the Photoelectrons Decay in Cubic AgCl Microcrystals by Sulfur Sensitization

作　　者：李晓苇[1] 胡延霞[1] 张荣香[1] 赵晓辉[1] 杨少鹏[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2008年第4期991-996,共6页Journal of Synthetic Crystals

基　　金：the National Natural Science Foundation of China ( No.10274017);Hebei Province Natural Scien Foundation (No.103097);The Research Foundation of Education Bureau of Hebei Province (Z-2003326)

摘　　要：本工作利用微波吸收介电谱技术检测了硫增感立方体氯化银微晶光电子的衰减时间谱,并根据实验结果建立了硫增感氯化银微晶的动力学模型,通过计算机求解由此模型得到的光电子衰减动力学方程,得到了不同增感时间下电子陷阱的浓度和深度,发现随增感时间的增加,电子陷阱的深度保持不变(0.201 eV),而陷阱的浓度发生了变化,即在增感时间为75 min时电子陷阱的浓度为7.5×10-6;在增感时间为60 min时电子陷阱的浓度为3×10-6,这些结论对于其它晶体特性的研究具有参考价值。In this work, the time spectrum of the photoelectrons decay in sulfur-sensitized AgCl microcrystals was measured by microwave absorption dielectric spectrum technique. A kinetics model of sulfur-sensitized AgCl microcrystals is proposed based on the experimental results. The concentrations and depths of electron trap are obtained by computer solves the equations of photoelectron decay dynamics which induced from the model. It is found that traps depth remain unchanged （0.201 eV）, and the traps concentration increase with the increasing of sensitization time, which is 7.5 × 10^ -6 with sensitizing time of 75 min and 3 × 10^ -6 with sensitizing time of 60 min. The conclusions can offer help for studying the characteristics of other crystals.

关 键 词：衰减动力学 氯化银微晶 光电子 电子陷阱 

分 类 号：O77[理学—晶体学]