热处理对氧化铋在8μm～14μm波段内的发射率的影响  

Effect of Heat Treatment Process on 8μm～14μm Infrared Emissivity of Bismuth Oxide

作　　者：胡晨[1] 徐国跃[1] 左永平[1] 程传伟[1] 蔡刚[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《红外》2008年第8期1-5,共5页Infrared

基　　金：国家自然科学基金重大研究计划(90505008)

摘　　要：本文通过设计正交实验,采用不同的热处理工艺对着色颜料氧化铋粉末进行热处理,随后测量样品在8μm～14μm波段的平均法向发射率,并得出优化的热处理工艺路线;对各个影响因素进行的分析表明,温度是热处理过程中影响样品发射率变化的主要因素,并通过XRD、SEM、EDS等多种表征手段,分析了红外发射率变化的内在机理.结果表明,晶格畸变是引起发射率变化的主要因素,而由气体分子吸附引起的表面成分变化对发射率也有一定的影响.In an orthogonal experiment designed, different heat treatment technics were used to treat the bismuth oxide powder. Then, the average normal emissivity of the samples in the 8μm～14μm waveband were measured and the optimized heat treatment process was obtained. The analysis of the influence factors showed that temperature was the main factor that had influence on the emissivity of the sample in the heat treatment process. The variation mechanism of infrared emissivity was analyzed by means of XRD, SEM and EDS. The analysis result showed that the lattice distortion of crystal was the main factor resulting in emissivity variation and the change of surface composition caused by surface gas adsorption had certain influence on emissivity too.

关 键 词：红外发射率 正交实验 氧化铋 热处理 

分 类 号：TN976[电子电信—信号与信息处理]