红外弱光诱导掺铟铁铌酸锂晶体的光折变效应  

PHOTOREFRACTIVE EFFECT INDUCED BY LOW-POWER INFRARED LIGHT IN INDIUM AND IRON-DOPED LITHIUM NIOBATE CRYSTALS

作　　者：陈宝东[1] 杨立森[1] 温静[2] 武瑞祥[1] 张宝光[1] 崔俊杰[1] 

机构地区：[1]内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特010022 [2]内蒙古化工职业学院继续教育部,内蒙古呼和浩特010010

出　　处：《红外与毫米波学报》2008年第4期241-246,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(60467002);内蒙古自然科学基金(200408020111)资助项目

摘　　要：掺铟铁铌酸锂(In∶Fe∶LiNbO3)晶体在红外弱光辐照下正常折射率变化量Δn可以达到10-4数量级.探讨了光生载流子在漂移、扩散和光生伏打效应三种机制下输运迁移以及空间电荷场的形成过程.研究结果表明,光致折射率变化的机制主要是由光生伏打效应引起,并观察到在正常偏振光辐照下,红外弱光与可见光引起晶体的正常折射率变化分布明显不同.Under the illumination of low-power infrared light, the ordinary refractive index changes of Illumination of indium and iron-doped lithium niobate crystals（In： Fe： LiNbO3 ）can reach up to 10^-4. The migration of the photocarrier and the formative process of space field induced by photocarrier＇ s drift, diffusion and photovoltaic effect were studied. The investigative results show that the photovohaic effect is the main cause of the refractive index changes in the crystal. And it is also observed that under the illumination of ordinarily polarized irradiation light, the distribution of ordinary refractive index changes induced by low-power infrared light is obviously different from that of the ordinary refractive index changes induced by the visible light.

关 键 词：掺铟铁铌酸锂晶体 红外弱光 光折变效应 光生伏打效应 

分 类 号：O437[机械工程—光学工程]