简并点优化的高性能带隙基准电路  

A High Performance Bandgap Voltage Reference with Degeneracy Optimization

作　　者：应建华[1] 肖靖帆[1] 张俊[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《微电子学》2008年第4期605-608,共4页Microelectronics

摘　　要：在经典带隙拓扑的基础上，提出了一种高精度、低温漂带隙电压源电路的设计方案。同时，提出一种寻找并消除简并点的理论方法，用于指导启动电路的设计。设计的电路在XFAB0．6μm CMOS工艺上流片成功。测试结果表明：在2．45-16V电压范围内，该电压基准源的电压精度为1．202±0．2mV；在-10～80℃范围内，温度系数为7．6～9ppm／℃；最大功耗0．32mW。A high-precision and low-temperature voltage reference source was proposed based on classical topology of voltage reference, and theory of finding and canceling degeneration for designing start-up circuit was presented. The circuit was implemented in XFAB＇s 0. 6μm CMOS process. Test results showed that the reference source had a voltage precision of 1. 202 ±0. 2 mV at 2. 45 V to 16 V, and a temperature coefficient between 7. 6 ppm/℃ and 9 ppm/℃ in the temperature range from -10 ℃ to 80 ℃, with a max power of 0. 32 mW.

关 键 词：带隙基准电压源 高阶曲率补偿 电源抑制比 简并点优化 

分 类 号：TN432[电子电信—微电子学与固体电子学]