BiNbO_4掺杂对钛酸钡陶瓷介电性能的影响  

Effects of BiNbO4 Dopants Upon Dielectric Properties of BaTiO_3 Ceramics

作　　者：梁一帅[1] 杨成韬[1] 周晓华[1] 唐彬[1] 徐洋[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2008年第5期618-620,共3页Piezoelectrics & Acoustooptics

摘　　要：在BaTiO3(BT)-Nb2O5-ZnO三元系统中加入BiNbO4以获得中温烧结的X8R陶瓷材料。研究发现,BT陶瓷系统的室温介电常数随BiNbO4掺杂量的增加而减小,适量的BiNbO4可改善BT陶瓷的高温稳定性。SEM和XRD分析表明,掺杂BiNbO4可在BT系统中产生条状第二相Bi4Ti4O12,且第二相的比例随BiNbO4掺杂浓度的增加而增大。低介第二相Bi4Ti4O12的产生是BT陶瓷系统介电常数下降的原因。在空气中于1 100℃下烧成的BaTiO3陶瓷材料的主要性能指标:室温介电常数2ε98 K>1 600,介电损耗tanδ≤1.0%,电阻率ρ≥1011Ω.cm,-55^+125℃范围内最大电容量变化率不超过±10%。In this study, BiNbO4 have been doped into BaTiO3 （BT）-Nb2O5-ZnO ternary system in order to obtain the XSR materials sintered at intermediate temperature. The experiment results have revealed that the dielectric constant at room temperature decrease with the increase amount of BiNhO4 , hut a proper usage of BiNhO4 can improve dielectric properties of BT cerimics at high temperature. The SEM and XRD analysis showed that BiNbO4 doped BT system will produce the strip-shaped secondary phase Bi4Ti3O12. The proportion of the secondary phase grains increase as BiNhO4 contents increase. The formation of the secondary phase of Bi4Ti3O12 with low dielectric constant is presumed to be the factor that the dielectric constant of BT ceramics decreases. The BaTiO3 ceramics can be sintered at a temperature as low as 1 100℃ in air atmosphere, and its excellent dielectric properties are achieved, i.e. the dielectric constanf of ε298 K〉1 600, dielectric loss of tan δ≤ 1.0 %, the resistivity of ρ≥10^11Ω· cm and the maximum capacitance change of AC/C（--55～ ＋ 125 ℃ ）≤±10%.

关 键 词：X8R 钛酸钡 BINBO4 介电性能 

分 类 号：TM534[电气工程—电器]