Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor C_(fp)  

作　　者：WEMBE TAFO Evariste SU Hong GAO Yanni WU Ming 

机构地区：[1]Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China [2]Department of Physics, University of Douala, Cameroon

出　　处：《Nuclear Science and Techniques》2008年第4期241-245,共5页核技术（英文）

基　　金：National Natural Science Fundation of China (10675153);in part by the Third World Academy of Sciences;in part by the Institute of Modern Physics, Chinese Academy of Sciences

摘　　要：In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.In this paper, to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors, the CMOS FET is implemented as a feedback capacitor Cfp. so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit, the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns, the output resistance less than 94 Ω and the linearity almost good.

关 键 词：电流放大器 粒子探测技术 模拟实验 放射学 

分 类 号：TN722.71[电子电信—电路与系统]