Cu_xTe薄膜的结构及其对CdTe太阳电池性能的影响  

Structure of Cu_xTe thin films and its effects on CdTe solar cells

作　　者：吴晓丽[1] 夏庚培[1] 郑家贵[1] 李卫[1] 冯良桓[1] 武莉莉[1] 黎兵[1] 张静全[1] 雷智[1] 宋慧瑾[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064

出　　处：《高技术通讯》2008年第8期842-845,共4页Chinese High Technology Letters

基　　金：863计划(2003AA513010);教育部博士点基金(20050610024);四川省应用基础项目(2006J13-083)资助

摘　　要：用真空共蒸发法制备了 Cu_xTe 薄膜并将其运用于 CdTe 太阳电池中。对薄膜进行了 X 射线衍射(XRD)分析,比较了有、无 Cu_xTe 插层的 CdTe 太阳电池的暗态 I-V 特性和 C-V 特性。结果表明,刚沉积的薄膜非晶结构占主导地位,只有部分 Cu/Te 配比较低的薄膜出现多晶结构。Cu_xTe 插层的引入有利于消除 roll over (暗态 I-V 曲线饱和)现象,使电池的二极管理想因子和暗饱和电流密度降低,CdTe 掺杂浓度增加,有效地改善了CdTe 太阳电池的性能。用 Cu_xTe 薄膜作为背接触层,获得了效率为12.5%的 CdS/CdTe小面积(0.0707cm^2)太阳电池。CuxTe thin films were prepared by the vacuum co-evaporation technique and they were applied to CdTe solar cells. The XRD method was used for study of the structure of the films, and the I - V and C - V characteristics of the devices with or without CuxTe layers were compared. The results show that polycrystalline structure appears in the films with low Cu/Te ratio and non-crystalline structure is gradually becoming the dominant phase for the films with the increase of Cu/ Te ratio. Phase transformations occur after annealing. After introducing CuxTe layer in CdTe solar cells, the roll over phenomenon was eliminated. In addition, a lower diode ideal factor, a saturated dark current density and a higher cartier concentration were achieved. With CuxTe thin films as the back contact layer, a conversion efficiency of 12.5 % was ob- tained for CdS/CdTe solar cells with a small area of 0.0707cm^2.

关 键 词：CuxTe薄膜 背接触 CDTE太阳电池 性能 

分 类 号：TM914.4[电气工程—电力电子与电力传动]