Ba1＋x(Mg1／3Nb2／3)O3陶瓷的烧结行为和微波介电性能  

Sintering Behavior and Microwave Dielectric Properties of Ba_(1+x)(Mg_(1/3)Nb_(2/3))O_3 Ceramics

作　　者：田中青[1] 赵玮霖[1] 余洪滔[2] 陈维玲[1] 

机构地区：[1]重庆工学院材料科学与工程学院,重庆400050 [2]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《武汉理工大学学报》2008年第8期27-29,共3页Journal of Wuhan University of Technology

基　　金：重庆市科委自然科学基金(2006BB2392)

摘　　要：研究了A位Ba离子化学计量比变化对Ba(Mg1/3Nb2/3)O3陶瓷烧结行为、微观结构和微波介电性能的影响。结果表明,Ba缺量可促进Ba(Mg1/3Nb2/3)O3烧结和B位1∶2有序,而Ba过量则阻碍Ba(Mg1/3Nb2/3)O3烧结和B位1∶2有序。Ba缺量促进Ba(Mg1/3Nb2/3)O3烧结和B位1∶2有序是由于Ba缺位的存在,而Ba过量阻碍Ba(Mg1/3Nb2/3)O3烧结则是由于过量的Ba可能以游离态存在于晶界,阻碍了晶界的移动,从而降低了Ba(Mg1/3Nb2/3)O3陶瓷的烧结性能,抑制了致密化过程。Ba缺量对Ba(Mg1/3Nb2/3)O3陶瓷的介电常数影响不大。Ba缺量越多,材料的Qf值越低。Sintering behavior, microstructure and microwave dielectric properties of Ba（Mg1/3Nb2/3）O3 （ - 0.01≤x≤ 0.01） were investigated. An improvement of the degree of 1：2 ordering and sinterability was found in Ba-deficient Ba（Mg1/3 Nb2/3）O3 because there existed Ba vacancies. Excessive Ba inhibits the sintering and the degree of 1：2 ordering. It was proposed that excessive Ba exist in grain boundary and inhibit the movement of grain boundary. Therefore, the sintering was restrained. Ba-deficiency had little effect on dielectric constant of Ba（Mg1/3Nb2/3 ）O3 ceramics, With Ba-deficiency increasing, Qf value decreased drastically.

关 键 词：微波介质陶瓷 烧结性 有序 Ba(Mg1/3Nb2/3)O3 

分 类 号：TM534[电气工程—电器]