应用d电子合金设计理论优化GH907合金组织及持久性能  

Optimization of Microstructure and Rupture Strength of GH90 7Alloy Using D- Electron Alloy Design Theory

作　　者：刘瑛[1] 邓波[1] 陈淦生[1] 仲增墉[1] 

机构地区：[1]冶金工业部钢铁研究总院

出　　处：《材料工程》1997年第7期23-25,29,共4页Journal of Materials Engineering

摘　　要：硅对 GH 90 7合金基体γ及γ′稳定性产生显著影响。Si含量高于 0 .45 at% ,合金中析出颗粒状laves相 ,且随 Si含量增加 ,ε,L aves等第二相数量增多。适宜的第二相体积分数及分布有益于持久性能。应用 d-电子合金设计理论 (即新相分计算法 New PHACOMP)对该合金第二相析出倾向进行综合评价 ,得出随 Si含量增加 ,TCP相的析出倾向增强 ,合金适宜的 Mdγ范围为 Mdγ:0 .85 8～ 0 .86 7或 Mdγ′:1.112～1.132。Itwas discovered that the stability of matrixγ andγ′phase was notably affect- ed by the Si content in GH90 7.A high content of Si can result in the precipitation of Laves phase and the increment ofε phase.Proper types and volume fraction of precipitates are benefi- cial to rupture strength.A comprehensive evaluation of phase stability of the alloys was conduct- ed using the d- electron alloy design theory(or the New PHACOMP) .It was also proved that the tendency of the precipitation of TCP phase was enhanced with the increment of Si content. The proper range of Mdγ for GH90 7alloy is from0 .858to0 .867,and the corresponding value of Mdγ′is from 1 .1 1 2 to 1 .1 32 .

关 键 词：高温合金 d电子合金设计 持久强度 

分 类 号：TG132.32[一般工业技术—材料科学与工程]