退火气氛对铝诱导a-Si薄膜结晶过程的影响  

An Experimental Study of Aluminum-Induced Crystallization of Amorphous Silicon Thin Film in Different Atmospheres

作　　者：王成龙[1] 范多旺[1] 孙硕[2] 张福甲[2] 

机构地区：[1]国家绿色镀膜技术与装备工程技术研究中心 [2]兰州大学物理科学与技术学院,兰州730000

出　　处：《Journal of Semiconductors》2008年第8期1544-1547,共4页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2006AA04Z322);教育部长江学者与创新团队计划(批准号:IR0629);国家自然科学基金(批准号:50505037;60676033);兰州交通大学"青蓝"人才工程资助项目~~

摘　　要：以玻璃为衬底,室温条件下采用直流磁控溅射技术制备了Glass/Al/a-Si样品.在H2,N2和空气3种不同气氛中进行了退火处理.分别采用XRD,Raman光谱和SEM研究了退火气氛对a-Si薄膜铝诱导晶化(AIC)过程的影响.XRD实验结果表明:a-Si薄膜在H2气氛中400℃下经过90min的退火处理就能得到结晶较好的poly-Si薄膜.Raman光谱实验结果表明:在500℃下退火处理,相同时间内H2气氛中a-Si结晶程度最好,空气气氛中结晶程度最差.这是因为高温H2退火过程中,高活性H原子能将弱的Si—Si键破坏,并与之反应形成强Si—Si键,使得薄膜结构更加稳定有序,同时能加速薄膜中氧的外扩散,促使薄膜晶化.The influence of annealing atmosphere on the aluminum-induced crystallization （AIC） of a-Si film has been studied by X- ray diffraction spectroscopy,Raman spectroscopy,and scanning electron microscopy. The films were annealed in different annealing atmospheres,i, e., H2 ,N2 and air. The A1 and amorphous silicon films were deposited by DC magnetron sputtering on glass substrate. The XRD results indicate that the a-Si film was crystallized to poly-Si when the sample was annealed in H2 at 400℃ for 90min. The results of Raman spectroscopy show that the crystallinity of the samples after annealing in H2 is the maximum and the samples after annealing in air is the lowest under the same conditions,such as annealing temperature （500℃） and annealing time. The experimental results indicate that H2 stimulates the crystallization of a-Si weak bonding of Si--Si and accelerating the overflow rate films during high temperature annealing in hydrogen by both breaking the of O2 from the a-Si films.

关 键 词：a-Si薄膜 退火 晶化 AIC 

分 类 号：TN304.055[电子电信—物理电子学]