La_(1-x)Sr_xMnO_3氧化物薄膜的外延生长与电性研究  

Epitaxial Growth and Electrical Property Investigation of La_(1-x)Sr_xMnO_3 Films

作　　者：何光旭[1] 荆丽华[1] 朱明[1] 

机构地区：[1]东南大学物理系,江苏南京211189

出　　处：《化工时刊》2008年第8期14-17,共4页Chemical Industry Times

基　　金：江苏省自然科学基金BK2004078

摘　　要：用溶胶-凝胶法,在Si单晶片上定向外延生长单钙钛矿氧化物La1-xSrxMnO3(LSMO)(x 0.3、0.5、0.7)薄膜和异质结。X射线衍射结果表明LSMO薄膜成相较好,为多晶结构。I-V特性曲线表明不同掺杂浓度的LSMO/S i异质结都具有类似于传统p-n结的整流特性,C-V特性曲线表明掺杂浓度对LSMO/S i异质结电容有显著影响。Epitaxial perovskite oxide La1-xSrxMnO3 （LSMO）（ x = 0. 3、0. 5、0. 7 ） thin films and heterojunctions were fabricated on the Si（100） substrates by Sol - Gel method. The XRD results showed that LSMO films well structured on Si substrate were muhicrystal. The I - V curve showed that LSMO/Si heterojunction had rectification property similar to traditional semiconductor p - n junction. The C - V curve indicateed that various adulteration in LSMO made an obvious contribution to the capacity of LSMO/Si heterojunction.

关 键 词：单钙钛矿 镧锶锰氧 I-V C—V 

分 类 号：O614.331[理学—无机化学]