开关电流电路基本单元误差分析及其改进  

Analysis of error and improvement in switched current circuit memory cell

作　　者：徐岩峰[1] 康怡[1] 罗广孝[1] 

机构地区：[1]华北电力大学电气与电子工程学院,河北保定071003

出　　处：《国外电子元器件》2008年第9期9-10,13,共3页International Electronic Elements

摘　　要：开关电流技术(SI)是一种可取代开关电容技术的数据采样技术。首先介绍了SI技术,然后以SI电路基本单元为例,分析了SI电路存在的各种误差,并针对这些误差提出了解决方法;最后提出了一种新的改进电路。实验结果表明,采用TSMC0.35μm工艺参数和Hspice仿真电路,所设计的电路误差小,输出波形理想,从而可达到预期的目的。The switched current（SI） technology is a new sampled data technology which will replace the switched capacitor （SC）technology.First the conception of switched--current technology is introduced in this paper,and then an analysis of errors in SI--memory cell is given.The resolvents which aimed at the errors mentioned above are provided.At last,a new improved circuit is given.HSPICE simulation result using TSMC 0.35μm process parameter model demonstrates that the designed circuits have perfect output waveforms in terms of low errors.The results achieve the desired objectives.

关 键 词：开关 误差/电流开关 时钟馈通误差 电荷注入误差 失配误差 

分 类 号：TN401[电子电信—微电子学与固体电子学]