Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy  

作　　者：王龙海 戴英 邓兆 

机构地区：[1]School of Electrical and Information Engineering, Wuhan Institute of Technology, Wuhan 430073 [2]State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070

出　　处：《Chinese Physics Letters》2008年第9期3489-3492,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50672072.

摘　　要：The etch damage in integrated ferroelectric capacitors side wall fabricated by the typical integrated process （TIP- FeCAP） and the innovated integrated process （IIP-FeCAP） are investigated by piezoresponse force microscopy （PFM）. The IIP-FeCAP side wall exhibits fine and dear nanoscale domain images and the same piezoresponse signal as the thin film, and the domains can also be easily switched by an external voltage. In the TIP-FeCAP side wall, owing to the effect of etch damage, the very weak piezoresponse signal and some discrete domains can be observed, and the discrete domains cannot be switched by the applied 9 V and -9 V dc voltage. The PFM results reflect the etch damage in the integrated ferroelectric capacitors and also suggest that the PFM can be used as an efficacious tools to evaluate the etch damage at nanoscale and spatial variations.The etch damage in integrated ferroelectric capacitors side wall fabricated by the typical integrated process （TIP- FeCAP） and the innovated integrated process （IIP-FeCAP） are investigated by piezoresponse force microscopy （PFM）. The IIP-FeCAP side wall exhibits fine and dear nanoscale domain images and the same piezoresponse signal as the thin film, and the domains can also be easily switched by an external voltage. In the TIP-FeCAP side wall, owing to the effect of etch damage, the very weak piezoresponse signal and some discrete domains can be observed, and the discrete domains cannot be switched by the applied 9 V and -9 V dc voltage. The PFM results reflect the etch damage in the integrated ferroelectric capacitors and also suggest that the PFM can be used as an efficacious tools to evaluate the etch damage at nanoscale and spatial variations.

关 键 词：the power-law exponents PRECIPITATION durative abrupt precipitation change 

分 类 号：TM53[电气工程—电器]