中高能电子电离He原子的二重微分截面  

Double differential cross sections for electron impact ionization of helium at intermediate and high collision energies

作　　者：张穗萌[1] 吴兴举[1] 孙瑞[1] 杨欢[2] 高矿[2] 周军[1] 

机构地区：[1]安徽皖西学院数理系原子与分子物理研究所,六安237012 [2]安徽师范大学物理与电子信息学院,芜湖241000

出　　处：《原子与分子物理学报》2008年第4期887-893,共7页Journal of Atomic and Molecular Physics

基　　金：安徽省自然科学基金(03406203);安徽省教育厅重大科研项目基金(ZD2007002-1);安徽省教育厅自然科学基金(2006KJ267B);省高校拔尖人才专项基金([2003]022)共同资助的课题

摘　　要：这篇文章用BBK和DS3C模型,计算了入射能为100,200,300,400和600 eV等中、高能情况下,电子入射电离He原子的二重微分截面(DDCS),给出了散射电子和敲出电子截面的角分布.散射电子和敲出电子的二重微分截面分别通过敲出电子和散射电子三重微分截面(TDCS)在全空间的角度积分而得到,所有的理论结果与有效的实验测量进行了比较.研究表明:除400和600 eV的高入射能之外,理论结果均能与绝对测量的实验结果较好的符合.In the present work the double differential cross sections （DDCS＇s） for electron impact ionization of helium at intermediate and high incident energies of 100,200,300,400 and 600 eV have been calculated in the BBK and DS3C models. Angular dependences of the cross sections are presented for the scattered （primary） as well as for the ejected （secondary） electrons. The double differential cross sections of the scattered and the ejected electrons have been obtained by integrating the triple differential cross sections （TDCS＇s） over the entire angular range of the ejected and the scattered electrons, respectively. All results have been compared with available experiments, and reasonably good agreement has been noted except for high incident energies 400 and 600 eV.

关 键 词：二重微分截面 中高能入射电子 敲出电子 散射电子 

分 类 号：O561.5[理学—原子与分子物理]