Ge_(0.05)Si_(0.95)/Si异质结单模共面布拉格反射波导光栅的设计与分析  

Analysis and design of Ge_(0.05)Si_(0.95)/Si heterojunction single-mode coplanar Bragg reflection waveguide grating

作　　者：徐勤昌[1] 刘淑平[1] 郭云香[1] 

机构地区：[1]太原科技大学,山西太原030024

出　　处：《应用光学》2008年第5期763-766,共4页Journal of Applied Optics

基　　金：山西省自然科学基金资助项目(2007011047)

摘　　要：GeSi/Si异质结布拉格反射光栅是硅基光电集成领域一种重要的集成光学器件,分析GeSi/Si异质结的传光特性和布拉格条件,通过求解布拉格光栅方程,得出耦合系数和耦合效率。利用上述原理设计出入射角为66°,波导层的厚度为2μm,光栅长度为4 252μm,槽深为0.05μm,光栅周期为0.456μm,滤波带宽为0.214 nm,耦合效率为84.1%的1.3μm Ge0.05Si0.95/Si异质结单模共面布拉格反射光栅,并用数值模拟了入射光波电场和反射光波电场的分布。GeSi/Si heterojunction single-mode coplanar Bragg reflection grating is an important optoelectronic integrated device in silicon based optoelectronic integrated circuits （OEIC）. Optical transmission properties of GeSi/Si heterojunction and Bragg conditions are analyzed. The coupling coefficient and the coupling efficiency were derived by solving the Bragg grating equation. According to the above principle, the 1.3μm Ge0.05Si0.95/Si heterojunction single- mode coplanar Bragg reflection grating was designed, whose incident angle was 66°, waveguide thickness was 2μm, coupling width was 4252μm, groove depth was 0.05μm, grating period was 0. 456μm, filtering bandwidth was 0.214 nm and coupling efficiency was 84.1%. The distribution of the electric fields of the incident and the reflected guide modes was numerically simulated.

关 键 词：GeSi/Si异质结 布拉格反射波导光栅 分/合波器 电场分布 

分 类 号：TN252[电子电信—物理电子学]