基于表面等离子体效应的MEMS红外辐射源特性研究  

The Research of MEMS Infrared Radiation Source Characteristics Based on Surface Plasmon Resonance Effect

作　　者：王国勋[1] 纪新明[1] 周嘉[1] 包宗明[1] 鲍敏杭[1] 黄宜平[1] 

机构地区：[1]复旦大学专用集成电路及系统国家重点实验室微电子学系,上海200433

出　　处：《传感技术学报》2008年第8期1352-1356,共5页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助项目(90607015)

摘　　要：研究了一种新型的基于二维光子晶体结构的表面等离子体共振SPR(Surface plasmon resonance)效应的红外辐射源,该辐射源基本结构为Si-SiO2(650nm)-Cr(100nm)-Au(800nm),并在Au表面刻蚀5μm的周期性排列的圆孔。设计加工了几种不同的结构,包括三种不同的圆孔间距即晶格常数:6μm,7μm,和8μm;四种占空比(圆孔直径与晶格常数之比):3/8,4/8,9/16和11/16;以及三种圆孔排列方式:正方形排列,六边型排列,和带规则缺陷六边型排列。本文采用红外傅立叶测量设备对辐射源进行测试分析,通过该辐射源的红外反射谱表征其辐射性能,并利用FDTD软件进行模拟,和实验数据作了比较。研究结果得出了红外辐射源反射谱波谷位置即SPR共振峰位置,波谷强度即SPR共振峰强度与不同结构参数之间的关系。研究发现该辐射源SPR共振峰位置基本与圆孔间距即晶格常数成正比,正方型排列基本接近于1:1,而六边型排列基本接近于3/2;常规六边型排列比带缺陷六边型排列和正方型排列具有更窄的半波宽和更大的SPR共振强度;随着占空比变大,该辐射源的SPR共振峰强度变大。In this work, a tunable narrow-band infrared emitters based on the surface plasmon resonance （SPR） technology is reported and the relation between reflection spectrum of infrared light emitters and structure of metallized-surface 2D photonic crystal has been studied. The emitters are structured by Si- SIO2（650 nm）-Cr（100 nm）-Au（800 nm）. Eight structures with different lattice constant a, diameter of holes D, D/a and the symmetry of the hole array are designed and fabricated. The effect of different parameters including a, D and D/a has been studied. The wavelength of reflection peak and strength of reflection peak of the emitters are characterized by infrared light reflection spectrum. The experimental data has been compared and analyzed with simulation results from finite-difference time-domain （FDTD） calculation. It is found that the peak wavelength was proportional to the lattice constant. For emitters with same lattice constant, the larger the ratio, the stronger the reflection. The emitters with hexagonal array among three different symmetries of hole array, has the best reflection spectrum.

关 键 词：表面等离子体效应 MEMS红外辐射源 光子晶体 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]