AlGaInP发光二极管内量子效率测量分析  

Measurement and analysis of the internal quantum efficiency of AlGaInP light-emitting diodes

作　　者：仲琳[1] 刘英斌[2] 陈国鹰[1] 赵润[2] 荣宝辉[1] 安振峰[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团总公司第十三研究所,河北石家庄050051

出　　处：《光电子．激光》2008年第9期1200-1202,共3页Journal of Optoelectronics·Laser

摘　　要：采用两种方法对650nm AlGaInP LED内量子效率进行测量分析。一是考虑光子循环利用的影响,建立取光效率模型,使用光线追迹法模拟计算取光效率,进而反推出内量子效率。另一方法是变温L-I-V测量分析,在降温过程测量外量子效率随温度的变化,测量出一定温度范围内外量子效率出现最大值且稳定,并根据LED内部的复合机制,从而确定内量子效率值。最后分析两种测量方法,并给出了影响测量的因素。Two methods are used to determine the internal quantum efficiency（IQE） of AlGaInP based light-emitting Nodes （LEDs）, One is based on the extraction efficiency considering the influence of photon recycling. On the IQE,and the other one is based on the temperature characterization of the L-I-V. The light extraction efficiency was calculated by a ray tracking simulation,and the changes of external quantum efficiency over the temperature range from 30 K to 300 K were measured. Finally,the IQE was given by combining the two different methods.

关 键 词：发光二极管 内量子效率 取光效率 光子循环 温度 

分 类 号：TN312.8[电子电信—物理电子学]