电弧离子镀沉积TiAlN膜层的微观特性  

Micrographic Properties of TiAlN Films Deposited by Arc Ion Plating Technology

作　　者：王少鹏[1] 潘晓龙[1] 李争显[1] 

机构地区：[1]西北有色金属研究院腐蚀与防护研究所,陕西西安710016

出　　处：《热加工工艺》2008年第16期37-40,共4页Hot Working Technology

摘　　要：采用高纯铝、钛双靶源在TC11基材上沉积制备了TiAlN膜层,并分析研究了膜层微观特性。结果表明:沉积的TiAlN膜层厚2～3μm,膜层结构致密;可明显地观察到膜基界面处Ti、Al和N三种元素呈梯度分布,存在元素扩散,使膜层与基体间形成冶金结合;膜层沉积过程中钛靶电流对相结构有明显的影响,而基体偏压对相结构无明显影响。TiAlN films were prepared on the Ti-6.5Al-3.5Mo-1.5Zr-0.3Si alloy substrate by arc ion plating technique using high-purity titanium and aluminum targets. SEM, EDS and XRD were used to analyze micrographic properties of deposited TiAlN films. The results show that the thickness of deposited TiAlN films is about 2-3 μm, and its structure is compact. Nitrogen, aluminum and titanium elements are in gradient distribution in the film-substrate interface, and there is the element diffusion in the interface. Metallurgical bonding is obtained between TiAlN film and substrate. Ti target arc current parameters have an affect on phase structure of the deposited films, but pulse-bias has no obvious effect on it.

关 键 词：电弧离子镀 TiAlN膜层 显微组织 相结构 

分 类 号：TG146.2[一般工业技术—材料科学与工程]